 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SSM2304AGN N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement Lower gate charge Fast switching characteristics D BV DSS R DS(ON) S 30V 117m 2.5A ID SOT-23-3 G Description Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM2304AGN is in the SOT-23-3 package, which is widely preferred for lower power commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters and switches. D G S RoHS compliant. Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25C ID @ TA=70C IDM PD @ TA=25C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 20 2.5 2 10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/C C C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit C/W 3/21/2005 Rev.2.01 www.SiliconStandard.com 1 of 5 SSM2304AGN Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.1 2 3 0.8 1.8 5 9 11 2 120 62 24 1.67 Max. Units 117 190 3 1 10 100 5 190 V V/C m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF BV DSS/Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Breakdown Voltage Temperature Coefficient Reference to 25C, ID=1mA VGS=10V, ID=2.5A VGS=4.5V, ID=2A VDS=VGS, ID=250uA VDS=10V, ID=2.5A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS=20V ID=2.5A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3 , VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=1.2A, VGS=0V IS=2A, VGS=0V, dI/dt=100A/s Min. - Typ. 24 23 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270C/W when mounted on min. copper pad. 3/21/2005 Rev.2.01 www.SiliconStandard.com 2 of 5 SSM2304AGN 12 12 T A =25 o C 10 10 T A =150 C 10V 6.0V 5.0V 10V 6.0V 5.0V o ID , Drain Current (A) 8 ID , Drain Current (A) 8 6 6 4.0V 4 4.0V 4 2 V G =3.0V 2 V G =3.0V 0 0 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 140 1.8 130 I D =2 A T A =25C Normalized RDS(ON) 1.6 V G =10V I D =2.5A 120 1.4 RDS(ON) (m ) 110 1.2 100 1.0 90 0.8 80 70 3 5 7 9 11 0.6 -50 0 50 100 150 VGS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance 10.00 2.05 1.85 1.00 VGS(th) (V) IS (A) T j =150 o C T j =25 o C 1.65 0.10 1.45 0.01 0.1 0.5 0.9 1.3 1.25 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage vs. Junction Temperature 3/21/2005 Rev.2.01 www.SiliconStandard.com 3 of 5 SSM2304AGN f=1.0MHz 12 1000 I D =2.5A 10 VGS , Gate to Source Voltage (V) 8 C (pF) V DS =24V V DS =20V V DS =15V 6 100 C iss C oss 4 C rss 2 0 0 1 2 3 4 5 6 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (R thja) 0.2 10 0.1 0.1 ID (A) 1ms 1 0.05 PDM t 0.01 10ms 100ms 0.1 T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 270C/W 0.01 Single Pulse T A =25 C Single Pulse 0.01 0.1 1 10 o 1s DC 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off)tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 3/21/2005 Rev.2.01 www.SiliconStandard.com 4 of 5 SSM2304AGN Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 3/21/2005 Rev.2.01 www.SiliconStandard.com 5 of 5 |
Price & Availability of SSM2304AGN
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |